National Institute of Lasers and Optronics

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Material Division

• Thin Film Technology Group
• Epitaxial and Low dimensional Nanomaterials Group
• Lithography and Nano-functional Materials Group
• Material Characterization Group
• Design and Simulation Group
• Nano Energy Science Group

Epitaxial and Low dimensional Nanomaterials Group

Molecular Beam Epitaxy is a physical vapor deposition (PVD) technique for epitaxial growth of films by the interaction of molecular or atomic beams at the surface of a heated crystalline substrate under Ultra-High vacuum (UHV). Our group uses plasma-assisted molecular beam epitaxy to grow III-Nitride based light emitting diode (LED) and laser diode (LD) structures.

Equipment

• Plasma-Assisted Molecular Beam Epitaxy (MBE) System.
• In-situ Reflection High Energy Electron Diffraction (RHEED) and Spectroscopic Ellipsometer.

Recent activities

• Epitaxial growth of Gallium Nitride (GaN) on sapphire substrates by MBE.
• Development of Carbon activated Al₂O₃ radiation sensors.